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| Preliminary Product Description Sirenza Microdevices' SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. SXA-289 5-2000 MHz Medium Power GaAs HBT Amplifier Product Features * Patented High Reliability GaAs HBT Technology * High Output 3rd Order Intercept : +41.5 dBm typ. at 1960 MHz Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 IP3 IP3 * Surface-Mountable Power Plastic Package Applications * PCS, Cellular Systems * High Linearity IF Amplifiers dBm P1dB Gain(dB) P1dB Gain(dB) 850 MHz 1960 MHz Symbol P 1dB S 21 S11 IP3 NF Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression Small signal gain Input VSWR Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) Noise Figure f = 850 MHz [1] f = 1960 MHz [2] f = 850 MHz [1] f = 1960 MHz [2] f = 850 MHz f = 1960 MHz f = 850 MHz [1] f = 1960 MHz [2] f = 850 MHz f = 1960 MHz [2] V s = 8V Rbias = 27 Ohms VDevice = 5 V typ. Units dB m dB m dB dB dB m dB m dB dB mA C/W Min. 22.0 22.0 18.0 13.0 Typ. 24.0 24.0 20.0 15.0 1.3:1 1.7:1 Max. 21.5 16.0 38.0 39.0 40.5 41.5 5.0 5.7 6.5 120 ID Rth, j-l Device Current [1] Thermal Resistance (junction - lead) 85 105 108 [1] 100% Production tested. [2] Sample tested - Samples pulled from each package/wafer lot and tested using application circuit shown on page 5. The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100622 Rev H 1 SXA-289 5-2000 MHz Power Amplifier Note: Tuned for Output IP3 850 MHz Application Circuit Data, ID=105mA, T=+25C, RBias=27 Ohm, VS=8V P1dB vs Frequency 26 25 Gain vs. Frequency 25 23 dB dBm 24 23 22 21 800 -40C 25C 85C 21 25C -40C 19 17 15 85C 825 850 875 MHz 900 925 950 800 825 850 875 MHz 900 925 950 Input/Output Return Loss, Isolation vs Frequency Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 5 0 -5 -10 -15 -20 -25 -30 -35 800 45 S22 43 dBm 41 25C dB S11 39 S12 85C -40C 37 35 800 850 MHz 900 950 825 850 875 MHz 900 925 950 Third Order Intercept vs Tone Power 44 42 25C dBm Device Current (mA) Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 0 25C -40C 85C 40 85C -40C 38 36 0 3 6 9 12 15 POUT per tone (dBm) 2 4 VS (V) 6 8 10 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100622 Rev H 2 SXA-289 5-2000 MHz Power Amplifier Note: Tuned for Output IP3 1960 MHz Application Circuit Data, ID=105mA, T=+25C, RBias=27 Ohm, VS=8V P1dB vs Frequency 26 25 Gain vs. Frequency 20 18 -40C 85C dB dBm 24 23 22 21 1930 1940 25C 16 25C -40C 14 85C 12 10 1950 1960 MHz 1970 1980 1990 1930 1940 1950 1960 MHz 1970 1980 1990 Input/Output Return Loss, Isolation vs Frequency Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 0 -5 S22 44 42 S11 dBm -10 dB 25C 85C -15 -20 -25 40 38 36 1930 -40C S12 -30 -35 1930 1940 1950 1960 MHz 1970 1980 1990 1940 1950 1960 MHz 1970 1980 1990 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 44 Device Current (mA) 42 dBm 40 38 36 34 0 3 85C -40C 25C 180 160 140 120 100 80 60 40 20 0 0 25C -40C 85C 6 9 12 15 2 4 VS (V) 6 8 10 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100622 Rev H 3 SXA-289 5-2000 MHz Power Amplifier 850 MHz Application Circuit Data, ID=105mA, RBias=27 Ohm, VS=8V, IS-95, 9 Channels Forward 880 MHz Adjacent Channel Power vs. Channel Output Power -40 Adjacent Channel Power (dBc) +25C -45 -50 -55 +85C -40C -60 -65 -70 -75 12 13 14 15 16 17 Channel Output Power (dBm) IS-95 CDMA at 880 MHz +17 dBm +15 dBm +11 dBm +13 dBm 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100622 Rev H 4 SXA-289 5-2000 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Note: Circuit Optimized for Output IP3 Vs Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 7V 18 8V 27 10V 47 12V 62 Rbias C2 R1 Ref. D es. C3 C4 Power Rating 0.5W 1.0W 1.5W 2.0W 850 MHz 100pF 0.1uF 1000pF 68pF 5.6pF 33nH 390 Ohm 180 Ohm see chart 1960 MHz 68pF 0.1uF 1000pF 22pF 1.8pF 22nH 390 Ohm 180 Ohm see chart Part Number Rohm MCH18 series Matsuo 267M3502104K Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Toko LL1608-FS series Rohm MCR03 series Rohm MCR03 series L2 R2 L1 Z=50W, 45.5 Z=50W, 12.9 C7 SXA-289 C 1, C 7 C2 C3 C4 C5 C6 C6 C1 C5 Schematic L1, L2 R1 R2 Rbias Vs Rbias R1 R2 RFin C2 C3 C4 RFout C1 L1 L2 C7 C5 SXA-289 C6 SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100622 Rev H 5 SXA-289 5-2000 MHz Power Amplifier Active Current Feedback Bias Circuit (for 5V supply) Note: Circuit Optimized for Output IP3 Frequency 850 MHz 20.0 -22.8 37.7* 23.0 1960 M H z 14.9 -12.1 38.0* 23.3 Vs = 5V Small Signal Gain (dB) Input Return Loss (dB) C3 C4 C5 Output IP3 (dBm) P1dB(dBm) R1 2 6 Rbias U1 1 5 3 4 *Note: IP3 performance degraded due to lower (4.5V) device voltage. Ref. D es. C 1, C 7 850 MHz 100pF 5.6pF 0.1uF 1000pF 68pF 33nH 220 Ohm 1.8KOhm 750 Ohm 4.3 Ohm UMZ1N 1960 MHz 68pF 0.1uF 1000pF 22pF 1.2pF 22nH 220 Ohm 1.8KOhm 750 Ohm 4.3 Ohm UMZ1N Part Number Rohm MCH18 series Rohm MCH18 series Matsuo 267M3502104K Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Toko LL1608-FS series Rohm MCR03 series Rohm MCR03 series Rohm MCR03 series Rohm MCR03 series Rohm Vdev L1 C7 Z=50W, 45.5 R2 R3 C2 C3 C4 Z=50W, 12.9 C1 C2 SXA-289 C5 C6 C6 L1 Schematic R1 R2 R3 Rbias U1 U1 R1 C3 C4 C5 VCC Rbias RF IN 1 R2 L1 RF OUT C1 R3 C2 C6 C7 SXA-289 Sirenza Microdevices ECB-101872 Rev. B SOT-89 Active Bias Eval Board Active Bias Evaluation Board Layout NOTE: Reference Application Note AN-026 for more information on Active Current Bias Circuit. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100622 Rev H 6 Absolute Maximum Ratings Parameter Max. Supply Current (ID) Max. Device Voltage (VD) Max. Power Dissipation Max. RF Input Power Max. Junction Temp. (TJ) Operating Lead Temp. (TL) Max. Storage Temp. Absolute Limit 200 mA 6.0 V 1500 mW 100 mW +165 C -40 to +85 C +150 C Pin # 1 2 3 4 SXA-289 5-2000 MHz Power Amplifier Part Number Ordering Information Part Number SXA-289 Devices Per Reel 1000 Reel Size 7" Part Symbolization The part will be symbolized with a "XA2" designator on the top surface of the package. Pin Description Function B a se GND & Emitter Collector B a se P i n Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin Description Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l ESD: Class 1A (Passes 250V ESD Pulse) Appropriate precautions in handling, packaging and testing devices must be observed. GND & Emitter Same as Pin 2 Package Dimensions .059 (See SMDI MPO-100136 for tolerances) .161 .096 .041 .008 3 .045 Min XA2 .016REF 2 .118 .059 1 .029 .059 Ref .019 .118REF .009 .065 Min .016 .177 4 .085 Min MARKING AREA DOT DENOTES PIN 1 .041REF .161 REF TOP VIEW 5 .015TYP(4X) PCB Pad Layout Recommended Mounting Configuration for Optimum RF and Thermal Performance Ground Plane Plated Thru Holes (0.020" DIA) SXA-289 Machine Screws (Optional) DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100622 Rev H 7 |
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